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BUK768R1-100E Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK768R1-100E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 80 V; RL = 3.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
LD
internal drain
from upper edge of mounting base to
inductance
centre of die
LS
internal source
measured from source lead to source
inductance
bond pad ; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
240
ID
VGS(V) = 10
6
(A)
180
003aah739
5.5
20
RDSon
(mΩ)
15
Min Typ Max Unit
-
5535 7380 pF
-
521 625 pF
-
352 482 pF
-
23.5 -
ns
-
44.1 -
ns
-
72
-
ns
-
49.6 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.82 1.2 V
-
55
-
ns
-
134 -
nC
003aah740
120
5
10
60
5
4.5
4
0
0
2
4 VDS(V) 6
0
0
5
10
15 VGS(V) 20
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK768R1-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
© NXP B.V. 2012. All rights reserved
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