English
Language : 

BTA312-800C Datasheet, PDF (6/11 Pages) NXP Semiconductors – 3Q Hi-Com Triac
◁
NXP Semiconductors
Symbol
Parameter
Conditions
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
3
(1)
IGT
IGT(25°C)
2
(2)
003aag894
3
IL
IL(25°C)
2
(3)
1
1
BTA312-800C
3Q Hi-Com Triac
Min Typ Max Unit
500 -
-
V/µs
20
-
-
A/ms
003aag895
0
-50
0
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
50
100
150
Tj (°C)
0
-50
0
50
100
150
Tj (°C)
Fig. 8. Normalized latching current as a function of
junction temperature
Fig. 7. Normalized gate trigger current as a function of
junction temperature
BTA312-800C
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 October 2012
© NXP B.V. 2012. All rights reserved
6 / 11
 ▷