BLA6H1011-600 Datasheet, PDF (6/13 Pages) NXP Semiconductors – LDMOS avionics power transistor

NXP Semiconductors
BLA6H1011-600
LDMOS avionics power transistor
800
P_L
(W)
600
001aal838
(1)
(2)
400
200
0
0
4
8
12
16
20
P_i (W)
T_h = 65 °C; V_DS = 48 V; I_Dq = 100 mA; t_p = 50 μs; δ = 2 %.
(1) f = 1030 MHz
(2) f = 1090 MHz
Fig 8. Load power as a function of input power; typical values
7.3 Curves measured under Mode-S ELM pulse-conditions
21
G_p
(dB)
19
17
001aal839
(1)
(2)
(3)
15
13
11
0
200
400
600
800
P_L (W)
f = 1030 MHz; I_Dq = 100 mA.
(1) T_h = −40 °C
(2) T_h = +25 °C
(3) T_h = +65 °C
Fig 9. Power gain as a function of load power;
typical values
80
η_D
(%)
60
001aal840
(1)
(2)
40
20
0
0
200
400
600
800
P_L (W)
f = 1030 MHz; I_Dq = 100 mA.
(1) T_h = 25 °C
(2) T_h = 65 °C
Fig 10. Drain efficiency as a function of load power;
typical values
BLA6H1011-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
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