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BC857.215 Datasheet, PDF (6/10 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC856; BC857; BC858
1000
handbook, halfpage
hFE
800
MGT715
600
(1)
400
(2)
200
(3)
0
â10â2 â10â1
â1
â 10
â 102
â 103
IC (mA)
BC857B; VCE = â5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = â55 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
â 1200
haVnBdbEook, halfpage
(mV)
â 1000
(1)
â 800
(2)
â 600
â 400
(3)
MGT716
â 200
0
â10â2 â10â1
â1
â 10
â 102
â 103
IC (mA)
BC857B; VCE = â5 V.
(1) Tamb = â55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
â 104
handbook, halfpage
VCEsat
(mV)
â 103
MGT717
â 102
(1)
(3) (2)
â 10
â 10â1
â1
â 10
â 102
â 103
IC (mA)
BC857B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = â55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
â 1200
hVaBndEbsoaokt , halfpage
(mV)
â 1000
(1)
â 800
(2)
â 600
(3)
â 400
MGT718
â 200
0
â 10â1
â1
â 10
â 102
â 103
IC (mA)
BC857B; IC/IB = 20.
(1) Tamb = â55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 16
6
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