BAS56 Datasheet, PDF (6/10 Pages) NXP Semiconductors – High-speed double diode

NXP Semiconductors
High-speed double diode
Product data sheet
BAS56
10²
handbook, halfpage
IR
(μA)
10
1
(1)
(2)
MBH282
10^−1
10^−2
0
100
Tj (^oC)
200
(1) V_R = 60 V; maximum values.
(2) V_R = 60 V; typical values.
Fig.5 Reverse current as a function of
junction temperature.
2.0
handbook, halfpage
Cd
(pF)
1.5
MBH283
1.0
0.5
0
0
10
20
30
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 10
6