74LVC1G386 Datasheet, PDF (6/12 Pages) NXP Semiconductors – 3-input EXCLUSIVE-OR gate

NXP Semiconductors
74LVC1G386
3-input EXCLUSIVE-OR gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 6.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ^[1] Max
t_pd
propagation delay A, B, C to Y; see Figure 5
[2]
V_CC = 1.65 V to 1.95 V
2.0
8.0
17.0
V_CC = 2.3 V to 2.7 V
1.5
5.0
9.0
V_CC = 2.7 V
1.5
5.0
8.5
V_CC = 3.0 V to 3.6 V
1.0
4.5
7.5
V_CC = 4.5 V to 5.5 V
1.0
3.5
5.5
C_PD
power dissipation V_I = GND to V_CC; V_CC = 3.3 V ^[3]
-
13
-
capacitance
−40 °C to +125 °C Unit
Min
Max
2.0
22.0 ns
1.5
11.5 ns
1.5
11.0 ns
1.0
9.5
ns
1.0
7.0
ns
-
-
pF
[1] Typical values are measured at T_amb = 25 °C and V_CC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] t_pd is the same as t_PLH and t_PHL.
[3] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + ∑(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
∑(C_L × V_CC2 × f_o) = sum of outputs.
12. AC waveforms
V_I
A, B, C
input
GND
Y output
in phase
V_OH
V_OL
Y output
out of phase
V_OH
V_OL
V_M
t _PHL
V_M
t _PLH
V_M
Measurement points are given in Table 9.
V_OL and V_OH are typical output voltage levels that occur with the output load.
Fig 5. Input A, B, C to output Y propagation delays
t _PLH
t_PHL
mnb147
74LVC1G386_2
Product data sheet
Rev. 02 — 3 September 2007
© NXP B.V. 2007. All rights reserved.
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