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74HC2G32 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Dual 2-input OR gate
NXP Semiconductors
74HC2G32; 74HCT2G32
Dual 2-input OR gate
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter Conditions
25 °C
Min Typ Max
74HCT2G32
tpd
propagation nA, nB to nY; see Figure 6 [1]
delay
VCC = 4.5 V
- 13 24
tt
transition nY; see Figure 6
time
VCC = 4.5 V
[2]
-
6 15
CPD
power
per buffer;
[3] -
11
-
dissipation CL = 50 pF; fi = 1 MHz;
capacitance VI = GND to VCC
−40 °C to +85 °C
Min Max
-
30
-
19
-
-
−40 °C to +125 °C Unit
Min
Max
-
36 ns
-
22 ns
-
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] tt is the same as tTLH and tTHL.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms
VI
nA, nB input
GND
VOH
nY output
VOL
VM
tPHL
VY
tTHL
VM
VX
tPLH
tTLH
001aak020
Fig 6.
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
Propagation delay data input (nA, nB) to data output (nY) and transition time output (nY)
Table 9. Measurement points
Type
Input
74HC2G32
74HCT2G32
VM
0.5VCC
1.3 V
Output
VM
0.5VCC
1.3 V
VX
0.1VCC
0.1VCC
VY
0.9VCC
0.9VCC
74HC_HCT2G32_3
Product data sheet
Rev. 03 — 12 May 2009
© NXP B.V. 2009. All rights reserved.
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