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74HC04D-Q100 Datasheet, PDF (6/16 Pages) NXP Semiconductors – Hex inverter
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NXP Semiconductors
74HC04-Q100; 74HCT04-Q100
Hex inverter
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
ICC
supply current VI = VCC or GND; IO = 0 A;
-
-
2
-
20
-
40 A
VCC = 5.5 V
ICC additional
per input pin;
- 120 432
-
540
-
590 A
supply current VI = VCC  2.1 V; IO = 0 A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
CI
input
capacitance
- 3.5 -
-
-
-
- pF
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
25 C
Min Typ
74HC04-Q100
tpd
propagation delay nA to nY; see Figure 6
[1]
VCC = 2.0 V
-
25
VCC = 4.5 V
-
9
VCC = 5.0 V; CL = 15 pF
-
7
VCC = 6.0 V
tt
transition time
see Figure 6
-
7
[2]
VCC = 2.0 V
-
19
VCC = 4.5 V
-
7
VCC = 6.0 V
-
6
CPD
power dissipation per package; VI = GND to VCC [3] -
21
capacitance
74HCT04-Q100
tpd
propagation delay nA to nY; see Figure 6
[1]
VCC = 4.5 V
-
10
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation per package;
capacitance
VI = GND to VCC  1.5 V
-
8
[2]
-
7
[3]
-
24
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD  VCC2  fi  N +  (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
74HC_HCT04_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 10 April 2013
Max
85
17
-
14
75
15
13
-
19
-
15
-
40 C to +125 C Unit
Max
Max
(85 C) (125 C)
105
130 ns
21
26 ns
-
- ns
18
22 ns
95
110 ns
19
22 ns
16
19 ns
-
- pF
24
29 ns
-
- ns
19
22 ns
-
- pF
© NXP B.V. 2013. All rights reserved.
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