2PD601BSL Datasheet, PDF (6/13 Pages) NXP Semiconductors – 50 V, 200 mA NPN general-purpose transistors

NXP Semiconductors
2PD601BRL; 2PD601BSL
50 V, 200 mA NPN general-purpose transistors
600
h_FE
400
200
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(1)
(2)
(3)
0.12
I_C
(A)
0.08
0.04
I_B (mA) = 0.56
0.44
0.32
0.20
0.08
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0.50
0.38
0.26
0.14
0.02
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 10 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 6. 2PD601BSL: DC current gain as a function of
collector current; typical values
0.0
0.0
2.0
4.0
6.0
8.0
10.0
V_CE (V)
T_amb = 25 °C
Fig 7. 2PD601BSL: Collector current as a function of
collector-emitter voltage; typical values
1
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V_CEsat
(V)
10^−1
(1)
(2)
(3)
10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 10
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8. 2PD601BSL: Collector-emitter saturation voltage as a function of collector current; typical values
2PD601BRL_2PD601BSL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
© NXP B.V. 2010. All rights reserved.
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