2PB709BRL Datasheet, PDF (6/13 Pages) NXP Semiconductors – 50 V, 200 mA PNP general-purpose transistors

NXP Semiconductors
2PB709BRL; 2PB709BSL
50 V, 200 mA PNP general-purpose transistors
600
h_FE
400
200
006aac460
(1)
(2)
(3)
0
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −10 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 6. 2PB709BSL: DC current gain as a function of
collector current; typical values
−0.12
I_C
(A)
−0.08
−0.04
006aac461
I_B (mA) = −0.75
−0.7
−0.65
−0.6
−0.55
−0.5
−0.45
−0.4
−0.35
−0.3
−0.25
−0.2
−0.15
−0.1
−0.05
0.0
0.0
−2.0
−4.0
−6.0
−8.0 −10.0
V_CE (V)
T_amb = 25 °C
Fig 7. 2PB709BSL: Collector current as a function of
collector-emitter voltage; typical values
−1
006aac462
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 10
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8. 2PB709BSL: Collector-emitter saturation voltage as a function of collector current; typical values
2PB709BRL_2PB709BSL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 June 2010
© NXP B.V. 2010. All rights reserved.
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