2PB1424 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 20 V, 3 A PNP low VCEsat transistor

NXP Semiconductors
2PB1424
20 V, 3 A PNP low V_CEsat (BISS) transistor
−10⁴
I_C
(mA)
−10³
−10²
−10
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(1) (2) (3)
−2.0
I_C
(A)
−1.6
I_B (mA) = −20
−18
−16
−1.2
−0.8
−0.4
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−14
−12
−10
−8
−6
−4
−2
−1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
V_BE (V)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 4. Collector current as a function of base-emitter
voltage; typical values
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
V_CE (V)
T_amb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
−5
I_C
(A)
−4
−3
−2
−1
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I_B (mA) = −50
−45
−40
−35
−30
−25
−20
−15
−10
−5
10³
h_FE
10²
10
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(1)
(2)
(3)
0
0
−1
−2
−3
−4
−5
V_CE (V)
T_amb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 7. DC current gain as a function of collector
current; typical values
2PB1424_2
Product data sheet
Rev. 02 — 15 January 2007
© NXP B.V. 2007. All rights reserved.
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