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| P89LPC915 Datasheet, PDF (51/75 Pages) NXP Semiconductors – 8-bit microcontrollers with accelerated two-clock 80C51 core 2 kB 3 V Flash with 8-bit A/D converter | |||
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NXP Semiconductors
P89LPC915/916/917
8-bit microcontrollers with accelerated two-clock 80C51 core
8.26 Flash program memory
8.26.1 General description
The P89LPC915/916/917 ï¬ash memory provides in-circuit electrical erasure and
programming. The ï¬ash can be erased, read, and written as bytes. The Sector and Page
Erase functions can erase any ï¬ash sector (256 bytes) or page (16 bytes). The Chip
Erase operation will erase the entire program memory. ICP using standard commercial
programmers is available. In addition, IAP and byte-erase allows code memory to be used
for non-volatile data storage. On-chip erase and write timing generation contribute to a
user-friendly programming interface. The P89LPC915/916/917 ï¬ash reliably stores
memory contents even after 100,000 erase and program cycles. The cell is designed to
optimize the erase and programming mechanisms. The P89LPC915/916/917 uses VDD as
the supply voltage to perform the Program/Erase algorithms.
8.26.2 Features
⢠Programming and erase over the full operating voltage range.
⢠Byte erase allows code memory to be used for data storage.
⢠Read/Programming/Erase using ICP.
⢠Boot vector allows user-provided ï¬ash loader code to reside anywhere in the ï¬ash
memory space, providing ï¬exibility to the user.
⢠Any ï¬ash program/erase operation in 2 ms.
⢠Programming with industry-standard commercial programmers.
⢠Programmable security for the code in the ï¬ash for each sector.
⢠100,000 typical erase/program cycles for each byte.
⢠10 year minimum data retention.
8.26.3 Flash organization
The program memory consists of eight 256-byte sectors on the P89LPC915/916/917
devices. Each sector can be further divided into 16-byte pages. In addition to sector
erase, page erase, and byte erase, a 16-byte page register is included which allows from
1 to 16 bytes of a given page to be programmed at the same time, substantially reducing
overall programming time.
8.26.4 Using ï¬ash as data storage
The ï¬ash code memory array of this device supports individual byte erasing and
programming. Any byte in the code memory array may be read using the MOVC
instruction, provided that the sector containing the byte has not been secured (a MOVC
instruction is not allowed to read code memory contents of a secured sector). Thus any
byte in a non-secured sector may be used for non-volatile data storage.
8.26.5 Flash programming and erasing
Two different methods of erasing or programming of the ï¬ash are available. The ï¬ash may
be programmed or erased in the end-user application (IAP-Lite) under control of the
applicationâs ï¬rmware. Another option is to use the ICP mechanism. This ICP system
provides for programming through a serial clock/serial data interface. This device does not
provide for direct veriï¬cation of code memory contents. Instead, this device provides a
32-bit CRC result on either a sector or the entire user code space.
P89LPC915_916_917_5
Product data sheet
Rev. 05 â 15 December 2009
© NXP B.V. 2009. All rights reserved.
51 of 75
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