PMEG3010EP Datasheet, PDF (5/13 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3010EP
1 A low V_F MEGA Schottky barrier rectifier
10³
Z_th(j-a)
(K/W)
10²
10
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02 _0.01
0
006aab298
10^−1
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 0.1 A
I_F = 0.5 A
I_F = 1 A
I_R
reverse current
V_R = 5 V
V_R = 30 V
C_d
diode capacitance f = 1 MHz
V_R = 1 V
V_R = 10 V
Min Typ Max Unit
-
230 260 mV
-
280 310 mV
-
320 360 mV
-
55
-
µA
-
0.6 1.5 mA
-
170 -
pF
-
60
-
pF
PMEG3010EP_1
Product data sheet
Rev. 01 — 30 December 2008
© NXP B.V. 2009. All rights reserved.
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