PMBT3906M Datasheet, PDF (5/11 Pages) NXP Semiconductors – 40 V, 200 mA PNP switching transistor

NXP Semiconductors
PMBT3906M
40 V, 200 mA PNP switching transistor
Table 7. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
C_e
emitter capacitance V_EB = −500 mV;
I_C = i_c = 0 A; f = 1 MHz
f_T
transition frequency V_CE = −20 V;
I_C = −10 mA;
f = 100 MHz
NF
noise figure
V_CE = −5 V;
I_C = −100 µA; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
Min Typ Max Unit
-
-
10
pF
250 -
-
MHz
-
-
4
dB
400
h_FE
(1)
300
006aab120
200
(2)
(3)
100
0
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −1 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−0.3
I_C
(A)
−0.2
I_B (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.1
006aab121
−2.5
−2.0
−1.5
−1.0
−0.5
0
0
−2
−4
−6
−8
−10
V_CE (V)
T_amb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
PMBT3906M_1
Product data sheet
Rev. 01 — 22 July 2009
© NXP B.V. 2009. All rights reserved.
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