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PEMB24_09 Datasheet, PDF (5/11 Pages) NXP Semiconductors – PNP/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW | |||
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NXP Semiconductors
PEMB24; PUMB24
PNP/PNP resistor-equipped transistors; R1 = 100 kâ¦, R2 = 100 kâ¦
103
hFE
102
006aaa188
(1)
(2)
(3)
â10â1
VCEsat
(V)
006aaa189
(1)
(2)
(3)
10
â10â1
â1
â10
â102
IC (mA)
VCE = â5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = â40 °C
Fig 1. DC current gain as a function of collector
current; typical values
â10
006aaa190
VI(on)
(V)
(1)
(2)
(3)
â1
â10â2
â10â1
â1
â10
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
â10
006aaa191
VI(off)
(V)
(1)
(2)
(3)
â1
â10â1
â10â1
â1
â10
IC (mA)
VCE = â0.3 V
(1) Tamb = â40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
â10â1
â10â2
â10â1
â1
â10
IC (mA)
VCE = â5 V
(1) Tamb = â40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PEMB24_PUMB24_2
Product data sheet
Rev. 02 â 2 September 2009
© NXP B.V. 2009. All rights reserved.
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