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PDTC123J Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM
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NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Product data sheet
PDTC123J series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0
VCE = 30 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 10 mA
IC = 5 mA; IB = 0.25 mA
IC = 100 μA; VCE = 5 V
IC = 5 mA; VCE = 0.3 V
R-----2--
R1
resistor ratio
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN.
−
−
−
−
100
−
−
1.1
1.54
TYP.
−
−
−
−
−
−
0.6
0.75
2.2
MAX. UNIT
100 nA
1
μA
50
μA
180 μA
−
100 mV
0.5 V
−
V
2.86 kΩ
17
21
26
−
−
2.5 pF
2004 Aug 13
5
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