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PDTA143Z Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW | |||
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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product data sheet
PDTA143Z series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = â50 V; IE = 0
VCE = â30 V; IB = 0
VCE = â30 V; IB = 0; Tj = 150 °C
VEB = â5 V; IC = 0
VCE = â5 V; IC = â10 mA
IC = â5 mA; IB = â0.25 mA
IC = â100 μA; VCE = â5 V
IC = â5 mA; VCE = â0.3 V
â
â
â100 nA
â
â
â1
μA
â
â
â50 μA
â
â
â170 μA
100 â
â
â
â
â100 mV
â
â0.6 â0.5 V
â1.3 â0.9 â
V
3.3 4.7 6.1 kΩ
R-----2--
R1
resistor ratio
8
10
12
Cc
collector capacitance
IE = ie = 0; VCB = â10 V; f = 1 MHz â
â
3
pF
2004 Aug 05
5
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