PDTA143T Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors: R1 = 4.7 KOHM, R2 = open

NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
PDTA143T series
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
R1
C_c
collector-base cut-off current
V_CB = −50 V; I_E = 0
−
−
collector-emitter cut-off current
V_CE = −30 V; I_B = 0
−
−
V_CE = −30 V; I_B = 0; T_j = 150 °C −
−
emitter-base cut-off current
V_EB = −5 V; I_C = 0
−
−
DC current gain
V_CE = −5 V; I_C = −1 mA
200 −
collector-emitter saturation voltage I_C = −5 mA; I_B = −0.25 mA
−
−
input resistor
3.3 4.7
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
−100 nA
−1
μA
−50 μA
−100 nA
−
−150 mV
6.1 kΩ
3
pF
2004 Aug 04
5