PBLS4004Y Datasheet, PDF (5/11 Pages) NXP Semiconductors – 40 V PNP BISS loadswitch

NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
600
h_FE
400
200
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(1)
(2)
(3)
−1
I_C
(A)
−0.8
I_B (mA) = −30
−27
−24
−21
−18
−0.6
−0.4
−0.2
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−15
−12
−9
−6
−3
0
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 1. TR1 (PNP): DC current gain as a function of
collector current; typical values
−1.1
V_BE
(V)
−0.9
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(1)
−0.7
(2)
(3)
−0.5
0
0
−1
−2
−3
−4
−5
V_CE (V)
T_amb = 25 °C
Fig 2. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1.1
V_BEsat
(V)
−0.9
−0.7
−0.5
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(1)
(2)
(3)
−0.3
−0.3
− 0.1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
−0.1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS4004Y_PBLS4004V_3
Product data sheet
Rev. 03 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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