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| PBHV8540T Datasheet, PDF (5/12 Pages) NXP Semiconductors – 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off VCB = 320 V; IE = 0 A
-
current
VCB = 320 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter
VCE = 320 V; IC = 0 A
-
cut-off current
IEBO
emitter-base cut-off VEB = 4 V; IC = 0 A
-
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
VCE = 10 V
IC = 50 mA
IC = 100 mA
IC = 300 mA
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
IC = 300 mA; IB = 60 mA
IC = 300 mA; IB = 60 mA
100
80
[1] 10
-
-
-
[1] -
fT
transition frequency VCE = 10 V;
-
IC = 100 mA;
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
-
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V;
-
IC = ic = 0 A; f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
VCC = 6 V; IC = 0.5 A;
-
IBon = 0.1 A;
-
IBoff = â0.1 A
-
ts
storage time
-
tf
fall time
-
toff
turn-off time
-
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Typ Max Unit
-
100 nA
-
10
µA
-
100 nA
-
100 nA
200 -
150 -
20
-
100 200 mV
60
90
mV
135 250 mV
0.91 1.1 V
30
-
MHz
4
-
pF
165 -
pF
50
-
ns
6200 -
ns
6250 -
ns
800 -
ns
2200 -
ns
3000 -
ns
PBHV8540T_1
Product data sheet
Rev. 01 â 5 February 2008
© NXP B.V. 2008. All rights reserved.
5 of 12
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