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BUK9277-55A Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS logic level FET
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NXP Semiconductors
BUK9277-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS
drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
LS
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; see Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 10 A; see Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 10 A
VGS = 10 V; ID = 10 A
ID = 10 A; VDD = 44 V; VGS = 5 V;
see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω
from drain lead from package to center of die
from source lead from package to source
bond pad
IS = 15 A; VGS = 0 V; see Figure 15
IS = 20 A; dIS/dt = −100 A/µs;
VGS = −10 V; VR = 30 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.3 V
-
0.05 10 µA
-
-
500 µA
-
2
100 nA
-
65 77 mΩ
-
-
154 mΩ
-
-
86 mΩ
-
59 69 mΩ
-
11 -
nC
-
1.6 -
nC
-
5
-
nC
-
440 643 pF
-
90 110 pF
-
60 93 pF
-
10 -
ns
-
47 -
ns
-
28 -
ns
-
33 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
33 -
ns
-
60 -
nC
BUK9277-55A_2
Product data sheet
Rev. 02 — 24 October 2006
© NXP B.V. 2006. All rights reserved.
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