BUK9240-100A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS
V_GS(th)
drain-source breakdown
voltage
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 100 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±10 V; V_DS = 0 V
V_GS = 5 V; I_D = 25 A;
Figure 7 and 8
Dynamic characteristics
T_j = 25 °C
T_j = 175 °C
V_GS = 4.5 V; I_D = 25 A;
T_j = 25 °C
V_GS = 10 V; I_D =25 A;
T_j =25°C
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_d
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
V_GS = 0 V; V_DS = 25 V;
f = 1 MHz; Figure 12
V_DD = 30 V; R_L = 1.2 Ω;
V_GS = 5 V; R_G = 10 Ω
measured from drain lead
from package to centre of
die
L_s
internal source inductance measured from source lead
from package to source
bond pad
BUK9240-100A
TrenchMOS™ logic level FET
Min
Typ
Max
Unit
100
−
−
V
89
−
−
V
1
1.5
2
V
0.5
−
−
V
−
−
2.3
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
−
34
40
mΩ
−
−
100
mΩ
−
−
44.6
mΩ
−
33
38.6
mΩ
−
2304
3072
pF
−
222
266.4
pF
−
151
207
pF
−
20
−
ns
−
135
−
ns
−
125
−
ns
−
90
−
ns
−
2.5
−
nH
−
7.5
−
nH
9397 750 07573
Product specification
Rev. 01 — 03 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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