 English |
|
|
|
|
|
|
|
| BUK7Y102-100B Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
102
ID
(A)
10
Limit RDSon = VDS / ID
DC
1
10-1
1
10
003aac623
10μ s
100μ s
1ms
10ms
100ms
102
103
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
see Figure 5
Min Typ Max Unit
-
-
2.53 K/W
10
Zth (j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
003aac483
10-1 0.05
0.02
P
δ = tp
T
single shot
tp
t
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK7Y102-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 7 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese