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BUK761R4-30E Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK761R4-30E
N-channel TrenchMOS standard level FET
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
0.02
10-2
single shot
003aah663
P
δ=
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 9; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 24 V; VGS = 10 V;
Fig. 13; Fig. 14
QGD
gate-drain charge
BUK761R4-30E
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 October 2012
Min Typ Max Unit
30
-
-
V
27
-
-
V
2.4 3
4
V
-
-
4.5 V
1
-
-
V
-
0.1 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
1.23 1.45 mΩ
-
-
2.6 mΩ
-
130 -
nC
-
33
-
nC
-
37
-
nC
© NXP B.V. 2012. All rights reserved
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