BC846DS Datasheet, PDF (5/12 Pages) NXP Semiconductors – 65 V, 100 mA NPN/NPN general-purpose transistor

NXP Semiconductors
BC846DS
65 V, 100 mA NPN/NPN general-purpose transistor
Table 7. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = 0.5 V; I_C = i_c = 0 A;
f = 1 MHz
f_T
transition frequency V_CE = 5 V; I_C = 10 mA;
f = 100 MHz
NF
noise figure
V_CE = 5 V; I_C = 0.2 mA;
R_S = 2 kΩ;
f = 10 Hz to 15.7 kHz
V_CE = 5 V; I_C = 0.2 mA;
R_S = 2 kΩ; f = 1 kHz;
B = 200 Hz
Min Typ Max Unit
-
1.9 -
pF
-
11
-
pF
100 -
-
MHz
-
1.9 -
dB
-
3.1 -
dB
600
h_FE
400
(1)
(2)
200
(3)
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0.20 _{IB (mA) = 4.50}
I_C
4.05
(A)
3.60
3.15
0.16
0.12
0.08
0.04
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2.70
2.25
1.80
1.35
0.90
0.45
0
10^−2
10^−1
1
10
10²
10³
I_C (mA)
0
0
2
4
6
8
10
V_CE (V)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4.
T_amb = 25 °C
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
BC846DS_1
Product data sheet
Rev. 01 — 17 July 2009
© NXP B.V. 2009. All rights reserved.
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