BC369 Datasheet, PDF (5/12 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
Product data sheet
BC369
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
f_T
collector-base cut-off current
V_CB = −25 V; I_E = 0 A
−
−
−100 nA
emitter-base cut-off current
V_CB = −25 V; I_E = 0 A; T_j = 150 °C
−
−
−10 μA
V_EB = −5 V; I_C = 0 A
−
−
−100 nA
DC current gain
BC369
V_CE = −10 V; I_C = −5 mA
V_CE = −1 V; I_C = −500 mA
V_CE = −1 V; I_C = −1 A
50 −
−
85 −
375
60 −
−
BC369-16
V_CE = −1 V; I_C = −500 mA
100 −
BC369-25
V_CE = −1 V; I_C = −500 mA
160 −
collector-emitter saturation voltage I_C = −1 A; I_B = −100 mA
−
−
base-emitter voltage
V_CE = −10 V; I_C = −5 mA
−
−
V_CE = −1 V; I_C = −1 A
−
−
collector capacitance
V_CB = −10 V; I_E = i_e = 0 A; f = 1 MHz −
28
250
375
−500 mV
−700 mV
−1 V
−
pF
transition frequency
V_CE = −5 V; I_C = −50 mA; f = 100 MHz 40 140 −
MHz
2004 Nov 05
5