BC368 Datasheet, PDF (5/9 Pages) Motorola, Inc – Amplifier Transistors

NXP Semiconductors
NPN medium power transistor;
20 V, 1 A
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
f_T
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
V_CB = 25 V; I_E = 0 A
V_CB = 25 V; I_E = 0 A;
T_amb = 150 °C
V_EB = 5 V; I_C = 0 A
V_CE = 10 V; I_C = 5 mA
V_CE = 1 V; I_C = 500 mA
V_CE = 1 V; I_C = 1 mA
I_C = 1 A; I_B = 100 mA
V_CE = 10 V; I_C = 5 mA
V_CE = 1 V; I_C = 1 A
V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
V_CE = 5 V; I_C = 50 mA;
f = 100 MHz
Product data sheet
BC368
MIN.
−
−
TYP.
−
−
MAX. UNIT
100 nA
10
μA
−
−
100 nA
50
−
−
85
−
375
60
−
−
−
−
500 mV
−
−
700 mV
−
−
1
V
−
22
−
pF
40
170 −
MHz
2.4
handboo_ICk, halfpage
(A)
2.0
1.6
1.2
0.8
0.4
MLE325
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
1
2
3
4
5
VCE (V)
T_amb = 25 °C.
(1) I_B = 10 mA.
(2) I_B = 9 mA.
(3) I_B = 8 mA.
(4) I_B = 7 mA.
(5) I_B = 6 mA.
(6) I_B = 5 mA.
(7) I_B = 4 mA.
(8) I_B = 3 mA.
(9) I_B = 2 mA.
(10) I_B = 1 mA.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2004 Nov 05
handbook¹, halfpage
VBE
(V)
MLE326
10^−1
10^−4
10^−3
10^−2
10^−1
1
10
IC (A)
V_CE = 1 V.
Fig.4 Base-emitter voltage as function of collector
current; typical values.
5