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BAT54C.215 Datasheet, PDF (5/11 Pages) NXP Semiconductors – Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NXP Semiconductors
BAT54 series
Schottky barrier diodes
10
Cd
(pF)
8
006aac891
6
4
2
0
0
10
20
30
VR (V)
f = 1 MHz; Tamb = 25 C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
8. Test information
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
(1) IR = 1 mA
Fig 4. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAT54_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 5 October 2012
© NXP B.V. 2012. All rights reserved.
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