BAS321 Datasheet, PDF (5/9 Pages) NXP Semiconductors – General purpose diode

NXP Semiconductors
General purpose diode
Product data sheet
BAS321
handbook¹, ⁰ha²lfpage
IR
(µA)
10
(1)
(2)
1
MBG381
10 ¹
10 ²
0
100
Tj (^oC)
200
(1) V_R = V_Rmax; maximum values.
(2) V_R = V_Rmax; typical values.
Fig.5 Reverse current as a function of junction
temperature.
1.0
handbook, halfpage
Cd
(pF)
0.8
MBG447
0.6
0.4
0.2
0
2
4
6 _{VR (V)} 8
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
300
handbook, halfpage
VR
(V)
200
MBK926
100
0
0
50
100
150
200
Tamb (°C)
Fig.7 Maximum permissible continuous
reverse voltage as a function of the
ambient temperature.
2004 Jan 26
5