BAS28.215 Datasheet, PDF (5/12 Pages) NXP Semiconductors – High-speed double diode

NXP Semiconductors
BAS28
High-speed double diode
10⁵
I_R
(nA)
10⁴
10³
10²
mga884
(1)
(2)
(3)
0.8
C_d
(pF)
0.6
0.4
0.2
mbg446
10
0
100
T_j (°C)
200
V_R = V_Rmax
(1) V_R = 75 V; maximum values
(2) V_R = 75 V; typical values
(3) V_R = 25 V; typical values
Fig 3. Reverse current as a function of junction
temperature
250
I_F
(mA)
200
0
0
4
8
f = 1 MHz; T_j = 25 °C
12 _{VR (V)} 16
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
msa562
150
100
50
0
0
50
100
150
200
T_amb (°C)
Fig 5. Forward current as a function of ambient temperature; derating curve
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
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