74HC1G86GW.125 Datasheet, PDF (5/11 Pages) NXP Semiconductors – 2-input EXCLUSIVE-OR gate

NXP Semiconductors
74HC1G86; 74HCT1G86
2-input EXCLUSIVE-OR gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T_amb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Min Typ Max Min
Max
I_CC
supply current
V_I = V_CC or GND; I_O = 0 A;
-
-
10
-
20
V_CC = 5.5 V
∆I_CC
additional supply
per input; V_CC = 4.5 V to 5.5 V;
-
- 500
-
850
current
V_I = V_CC − 2.1 V; I_O = 0 A
C_I
input capacitance
-
1.5
-
-
-
Unit
µA
µA
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; t_r = t_f ≤ 6.0 ns; All typical values are measured at T_amb = 25 °C. For test circuit see Figure 6
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
For type 74HC1G86
t_pd
propagation delay A and B to Y; see Figure 5
V_CC = 2.0 V; C_L = 50 pF
V_CC = 4.5 V; C_L = 50 pF
V_CC = 5.0 V; C_L = 15 pF
V_CC = 6.0 V; C_L = 50 pF
C_PD
power dissipation V_I = GND to V_CC
capacitance
[1]
-
-
-
-
[2]
-
22
115
-
11
23
-
9
-
-
9
20
-
23
-
-
135 ns
27 ns
-
ns
23 ns
-
pF
For type 74HCT1G86
t_pd
propagation delay A and B to Y; see Figure 5
V_CC = 4.5 V; C_L = 50 pF
V_CC = 5.0 V; C_L = 15 pF
C_PD
power dissipation V_I = GND to V_CC − 1.5 V
capacitance
[1]
-
13
23
-
-
10
-
-
[2]
-
23
-
-
27 ns
-
ns
-
pF
[1] t_pd is the same as t_PLH and t_PHL.
[2] C_PD is used to determine the dynamic power dissipation P_D (µW).
P_D = C_PD × V_CC2 × f_i + ∑ (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz
f_o = output frequency in MHz
C_L = output load capacitance in pF
V_CC = supply voltage in Volts
∑ (C_L × V_CC2 × f_o) = sum of outputs
74HC_HCT1G86_4
Product data sheet
Rev. 04 — 20 July 2007
© NXP B.V. 2007. All rights reserved.
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