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74HC1G126 Datasheet, PDF (5/12 Pages) NXP Semiconductors – Bus buffer/line driver; 3-state
NXP Semiconductors
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF unless otherwise specified. All typical values are measured at Tamb = 25 °C. For test
circuit see Figure 7
Symbol Parameter
Conditions
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
For type 74HC1G126
tpd
propagation delay A to Y; see Figure 5
VCC = 2.0 V
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V
ten
enable time
OE to Y; see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
tdis
disable time
OE to Y; see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation VI = GND to VCC
capacitance
[1]
-
24 125
-
-
10
25
-
-
9
-
-
-
9
21
-
[1]
-
24 155
-
-
10
31
-
-
8
26
-
[1]
-
16 155
-
-
12
31
-
-
11
26
-
[2]
-
30
-
-
150 ns
30 ns
-
ns
26 ns
190 ns
38 ns
32 ns
190 ns
38 ns
32 ns
-
pF
For type 74HCT1G126
tpd
propagation delay A to Y; see Figure 5
[1]
VCC = 4.5 V
-
11
30
-
VCC = 5.0 V; CL = 15 pF
-
10
-
-
ten
enable time
OE to Y; see Figure 6; VCC = 4.5 V [1] -
10
35
-
tdis
disable time
OE to Y; see Figure 6; VCC = 4.5 V [1] -
12
31
-
CPD
power dissipation VI = GND to VCC − 1.5 V
capacitance
[2]
-
27
-
-
36 ns
-
ns
42 ns
38 ns
-
pF
[1] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (CL × VCC2 × fo) = sum of outputs
74HC_HCT1G126_4
Product data sheet
Rev. 04 — 20 July 2007
© NXP B.V. 2007. All rights reserved.
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