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74HC00D-Q100 Datasheet, PDF (5/15 Pages) NXP Semiconductors – Quad 2-input NAND gate
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NXP Semiconductors
74HC00-Q100; 74HCT00-Q100
Quad 2-input NAND gate
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
74HC00-Q100
VIH
HIGH-level
VCC = 2.0 V
-
input voltage VCC = 4.5 V
-
VCC = 6.0 V
-
VIL
LOW-level
VCC = 2.0 V
-
input voltage VCC = 4.5 V
-
VCC = 6.0 V
-
VOH
HIGH-level
VI = VIH or VIL
output voltage
IO = 20 A; VCC = 2.0 V -
IO = 20 A; VCC = 4.5 V -
IO = 20 A; VCC = 6.0 V -
IO = 4.0 mA; VCC = 4.5 V -
IO = 5.2 mA; VCC = 6.0 V -
VOL
LOW-level
VI = VIH or VIL
output voltage
IO = 20 A; VCC = 2.0 V -
IO = 20 A; VCC = 4.5 V -
IO = 20 A; VCC = 6.0 V -
IO = 4.0 mA; VCC = 4.5 V -
IO = 5.2 mA; VCC = 6.0 V -
II
input leakage VI = VCC or GND;
-
current
VCC = 6.0 V
ICC
supply current VI = VCC or GND; IO = 0 A; -
VCC = 6.0 V
CI
input
-
capacitance
1.2 -
2.4 -
3.2 -
0.8 -
2.1 -
2.8 -
2.0 -
4.5 -
6.0 -
4.32 -
5.81 -
0
-
0
-
0
-
0.15 -
0.16 -
-
-
-
-
3.5 -
1.5
-
1.5
-
V
3.15 -
3.15 -
V
4.2
-
4.2
-
V
-
0.5
-
0.5
V
-
1.35 -
1.35 V
-
1.8
-
1.8
V
1.9
-
1.9
-
V
4.4
-
4.4
-
V
5.9
-
5.9
-
V
3.84 -
3.7
-
V
5.34 -
5.2
-
V
-
0.1
-
-
0.1
-
-
0.1
-
-
0.33 -
-
0.33 -
-
1
-
-
20
-
-
-
-
0.1
V
0.1
V
0.1
V
0.4
V
0.4
V
1
A
40
A
-
pF
74HC_HCT00_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2012
© NXP B.V. 2012. All rights reserved.
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