2PD601ART Datasheet, PDF (5/10 Pages) NXP Semiconductors – 50 V, 100 mA NPN general-purpose transistor

NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
500
h_FE
(1)
400
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300
(2)
200
(3)
100
0
10^−1
1
10
10²
I_C (mA)
V_CE = 10 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1.3
V_BEsat
(V)
0.9
(1)
(2)
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0.1
I_C
(A)
0.08
I_B (mA) = 0.56
0.06
0.04
0.02
0
0
2
4
6
T_amb = 25 °C
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0.50
0.44
0.38
0.32
0.26
0.20
0.14
0.08
0.02
8
10
V_CE (V)
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
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1
V_CEsat
(V)
10^−1
0.5
(3)
(1)
(2)
(3)
0.1
10^−1
1
10
10²
I_C (mA)
10^−2
10^−1
1
10
10²
I_C (mA)
I_C/I_B = 10
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
I_C/I_B = 10
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
2PD601ART_1
Product data sheet
Rev. 01 — 15 March 2007
© NXP B.V. 2007. All rights reserved.
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