NTAG213F Datasheet, PDF (41/56 Pages) NXP Semiconductors – NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection

NXP Semiconductors
NTAG213F/216F
NFC Forum T2T IC with 144/888 bytes user memory and field detection
10.4 WRITE
The WRITE command requires a block address, and writes 4 bytes of data into the
addressed NTAG21xF page. The WRITE command is shown in Figure 17 and Table 31.
Table 32 shows the required timing.
NFC device Cmd Addr
NTAG ,,ACK''
Data
708 µs
NTAG ,,NAK''
CRC
T_ACK
T_NAK
ACK
57 µs
NAK
57 µs
Time out
Fig 17. WRITE command
T_TimeOut
aaa-006990
Table 31.
Name
Cmd
Addr
CRC
Data
NAK
WRITE command
Code
A2h
-
-
-
see Table 21
Description
write one page
page address
CRC according to Ref. 1
data
see Section 9.3
Length
1 byte
1 byte
2 bytes
4 bytes
4-bit
Table 32. WRITE timing
These times exclude the end of communication of the NFC device.
WRITE
T_ACK/NAK min
n=9^[1]
T_ACK/NAK max
T_TimeOut
[1] Refer to Section 9.2 “Timings”.
T_TimeOut
10 ms
In the initial state of NTAG21xF, the following memory pages are valid Addr parameters to
the WRITE command.
• page address 02h to 2Ch for NTAG213F
• page address 02h to E6h for NTAG216F
Addressing a memory page beyond the limits above results in a NAK response from
NTAG21xF.
Pages which are locked against writing cannot be reprogrammed using any write
command. The locking mechanisms include static and dynamic lock bits as well as the
locking of the configuration pages.
NTAG213F_216F
Product data sheet
COMPANY PUBLIC
All information provided in this document is subject to legal disclaimers.
Rev. 3.0 — 18 July 2013
262230
© NXP B.V. 2013. All rights reserved.
41 of 56