PZUXDB2 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Dual Zener diodes

NXP Semiconductors
PZUxDB2 series
Dual Zener diodes
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per device
R_th(j-a)
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
500 K/W
[2] _-
-
455 K/W
[3] _-
-
200 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[3] Soldering points at pin 4 and pin 5.
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
V_F
forward voltage
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
I_F = 10 mA
I_F = 100 mA
Min Typ Max Unit
[1]
-
-
0.9 V
-
-
1.1 V
Table 8. Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG
T_j = 25 °C unless otherwise specified.
PZUxDB2
Working
PZUxDB2/DG voltage
V_Z (V)
Differential resistance Reverse
r_dif (Ω)
current
I_R (µA)
Temperature
coefficient
S_Z (mV/K)
Diode
capacitance
C_d (pF)^[1]
Non-repetitive
peak reverse
current
I_ZSM (A)^[2]
I_Z = 5 mA
I_Z = 0.5 mA I_Z = 5 mA
I_Z = 5 mA
Min Max Max
Max
Max V_R (V) Typ
Max
Max
2.7
2.65 2.9 1000
100
20 1
−2.0
440
8
3.0
2.95 3.2 1000
95
10 1
−2.1
425
8
3.3
3.25 3.5 1000
95
5
1
−2.4
410
8
3.6
3.55 3.8 1000
90
5
1
−2.4
390
8
3.9
3.87 4.1 1000
90
3
1
−2.5
370
8
4.3
4.15 4.34 1000
90
3
1
−2.5
350
8
4.7
4.55 4.75 800
80
2
1
−1.4
325
8
5.1
4.98 5.2 250
60
2
1.5 0.3
300
5.5
5.6
5.49 5.73 100
40
1
2.5 1.9
275
5.5
6.2
6.06 6.33 80
30
0.5 3
2.7
250
5.5
6.8
6.65 6.93 60
20
0.5 3.5 3.4
215
5.5
7.5
7.28 7.6 60
10
0.5 4
4.0
170
3.5
PZUXDB2_SER_1
Product data sheet
Rev. 01 — 31 March 2008
© NXP B.V. 2008. All rights reserved.
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