PZUXBA Datasheet, PDF (4/14 Pages) NXP Semiconductors – Single Zener diodes

NXP Semiconductors
PZUxBA series
Single Zener diodes
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
I_F
forward current
-
I_ZSM
non-repetitive peak reverse
[1] _-
current
P_ZSM
P_tot
T_j
T_amb
T_stg
non-repetitive peak reverse
power dissipation
total power dissipation
T_amb ≤ 25 °C
junction temperature
ambient temperature
storage temperature
[1] _-
[2] _-
[3] _-
-
−55
−65
Max
Unit
200
mA
see
Table 8
and 9
40
W
320
mW
490
mW
150
°C
+150
°C
+150
°C
[1] t_p = 100 µs; square wave; T_j = 25 °C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
6. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] _-
-
390 K/W
[2] _-
-
255 K/W
[3] _-
-
55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[3] Soldering point of cathode tab.
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
V_F
forward voltage
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
I_F = 10 mA
I_F = 100 mA
Min Typ Max Unit
[1]
-
-
0.9 V
-
-
1.1 V
PZUXBA_SER_1
Product data sheet
Rev. 01 — 19 September 2008
© NXP B.V. 2008. All rights reserved.
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