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| PSMN013-100PS Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 100V 13.9mΩ standard level MOSFET in TO220. | |||
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NXP Semiconductors
PSMN013-100PS
N-channel 100V 13.9m⦠standard level MOSFET in TO220.
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
10â1
1
DC
10
tp =10 μs
100 μs
003aae168
1 ms
10 ms
100 ms
102
VDS (V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from vertical in free air
junction to ambient
Min Typ Max Unit
-
0.5 0.9 K/W
-
60
-
K/W
1
Zth (j-mb)
(K/W) δ = 0.5
10-1 0.2
0.1
0.05
10-2 0.02
10-3 s ingle s hot
003aad575
P
δ = tp
T
10-4
1e -6
10-5
10-4
10-3
10-2
10-1
tp
t
T
1
10
tp (s )
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN013-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 22 January 2010
© NXP B.V. 2010. All rights reserved.
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