PRTR5V0U2AX Datasheet, PDF (4/10 Pages) NXP Semiconductors – Ultra low capacitance double rail-to-rail ESD protection diode in a SOT143B package

NXP Semiconductors
PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
V_RWM
reverse standoff voltage
I_R
reverse current
V_BR
breakdown voltage
C_(I/O-GND) input/output to ground
capacitance
C_sup
supply pin to ground
capacitance
V_F
forward voltage
Conditions
V_R = 3 V
f = 1 MHz;
V_(I/O-GND) = 0 V
f = 1 MHz;
V_CC = 0 V
[1] Measured from pin 2, 3 and 4 to ground
[2] Measured from pin 4 to ground
[3] Measured from pin 2 and 3 to ground
Min Typ Max Unit
-
-
5.5 V
[1] _-
< 1 100 nA
[2] ₆
-
9
V
[3] _-
1.8 -
pF
[2] _-
16 -
pF
-
0.7 -
V
2.2
C_(I/O-GND)
(pF)
2.0
006aaa679
1.8
1.6
1.4
1.2
0
1
2
3
4
5
V_(I/O-GND) (V)
f = 1 MHz; T_amb = 25 °C
Fig 2. Input/output to ground capacitance as a function of input/output to ground
voltage; typical values
PRTR5V0U2AX_2
Product data sheet
Rev. 02 — 21 December 2006
© NXP B.V. 2006. All rights reserved.
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