PRLL5817 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Schottky barrier diodes

NXP Semiconductors
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
forward voltage
PRLL5817
V_F
forward voltage
PRLL5818
V_F
forward voltage
PRLL5819
I_R
reverse current
C_d
diode capacitance
PRLL5817
PRLL5818
PRLL5819
see Fig.2
I_F = 0.1 A
I_F = 1 A
I_F = 3 A
see Fig.2
I_F = 0.1 A
I_F = 1 A
I_F = 3 A
see Fig.2
I_F = 0.1 A
I_F = 1 A
I_F = 3 A
V_R = V_RRMmax; note 1
V_R = V_RRMmax; T_j = 100 °C
V_R = 4 V; f = 1 MHz
Note
1. Pulse test: t_p = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Refer to SOD87 standard mounting conditions.
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
MIN. TYP. MAX. UNIT
−
−
320
mV
−
−
450
mV
−
−
750
mV
−
−
330
mV
−
−
550
mV
−
−
875
mV
−
−
340
mV
−
−
600
mV
−
−
900
mV
−
0.5
1
mA
−
5
10
mA
−
70
−
pF
−
50
−
pF
−
50
−
pF
CONDITIONS
note 1
VALUE UNIT
150
K/W
1999 Apr 22
4