PMST3906 Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP switching transistor

NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
600
h_FE
(1)
400
mhc459
(2)
200
(3)
0
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −1 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 1. DC current gain as a function of collector
current; typical values
−1200
V_BE
(mV)
−1000
−800
mhc461
(1)
(2)
−600
(3)
−400
−250
I_C
(mA)
−200
−150
−100
−50
006aab475
I_B (mA) = −1.5
−1.20
−1.35
−1.05
−0.90 _−0.75
−0.60
−0.45
−0.30
−0.15
0
0
−2
−4
−6
−8
−10
V_CE (V)
T_amb = 25 °C
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
−1200
V_BEsat
(mV)
−1000
−800
mhc462
(1)
(2)
−600
(3)
−400
−200
−10^−1
−1
−10
−10²
−10³
I_C (mA)
−200
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −1 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 3. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 10
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
PMST3906_5
Product data sheet
Rev. 05 — 29 April 2009
© NXP B.V. 2009. All rights reserved.
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