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PMEG3010CEH Datasheet, PDF (4/10 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifiers
NXP Semiconductors
PMEG3010CEH; PMEG3010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
VF
forward voltage
[1]
IF = 1 mA
-
200
240
mV
IF = 10 mA
-
260
310
mV
IF = 100 mA
-
330
390
mV
IF = 500 mA
-
400
440
mV
IF = 700 mA
-
420
450
mV
IF = 1 A
-
450
520
mV
IR
reverse current
VR = 5 V
-
1.2
-
µA
VR = 10 V
-
1.8
-
µA
VR = 30 V
-
10
50
µA
Cd
diode capacitance VR = 1 V; f = 1 MHz
-
90
100
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PMEG3010CEH_PMEG3010CEJ_2
Product data sheet
Rev. 02 — 22 March 2007
© NXP B.V. 2007. All rights reserved.
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