PESD5V0L1BSF Datasheet, PDF (4/13 Pages) NXP Semiconductors – Ultra low profile bidirectional low capacitance

NXP Semiconductors
PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode
6. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_RWM
reverse standoff
voltage
I_RM
reverse leakage
V_RWM = 5 V
current
V_CL
V_BR
C_d
L_S
R_dyn
clamping voltage
breakdown voltage
diode capacitance
series inductance
dynamic resistance
I_PP = 1 A
I_PP = 3 A
I_R = 1 mA
I_R = −1 mA
f = 1 MHz
V_R = 0 V
V_R = 2.5 V
V_R = 5 V
Min Typ Max Unit
−5
-
5
V
-
1
100 nA
[1][2] _-
[1][2] _-
[3] ₆
[3] _−10
[4]
9
-
-
[5] _-
[6] _-
-
11.5 V
-
13.5 V
-
10
V
-
−6
V
12
15.4 pF
8.9 11.4 pF
8
10.2 pF
0.05 -
nH
1
-
Ω
[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;
see Figure 1.
[2] Measured from pin 1 to pin 2.
[3] Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
[4] This parameter is guaranteed by design.
[5] Calculated from S-parameter values.
[6] Non-repetitive current pulse, Transmission Line Pulse (TLP) t_p = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
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