PEMH17 Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

NXP Semiconductors
PEMH17; PUMH17
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Per device
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT666
Min Typ Max
[1] _-
-
625
[1][2] _-
-
625
[1] _-
-
416
[1][2] _-
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A
current
I_CEO
I_EBO
collector-emitter
cut-off current
emitter-base cut-off
current
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A;
T_j = 150 °C
V_EB = 5 V; I_C = 0 A
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 5 mA
I_C = 10 mA; I_B = 0.5 mA
V_I(off)
V_I(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = 5 V; I_C = 100 μA
V_CE = 0.3 V; I_C = 2 mA
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
1
μA
-
-
50
μA
-
-
110 μA
60
-
-
-
-
150 mV
-
1.7 1.2 V
4
2.7 -
V
33
47 61
kΩ
0.37 0.47 0.57
-
-
2.5 pF
PEMH17_PUMH17_3
Product data sheet
Rev. 03 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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