PEMB3 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP resistor-equipped double transistor R1 = 4.7 kohm, R2 = open

NXP Semiconductors
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
PEMB3; PUMB3
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per transistor
R_{th j-a}
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R_{th j-a}
thermal resistance from junction to ambient
SOT363
SOT666
CONDITIONS
T_amb ≤ 25 °C
note 1
notes 1 and 2
T_amb ≤ 25 °C
note 1
note 1
VALUE
625
625
416
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector-base cut-off current
I_CEO
collector-emitter cut-off current
I_EBO
h_FE
V_CEsat
R1
C_c
emitter-base cut-off current
DC current gain
saturation voltage
input resistor
collector capacitance
CONDITIONS
V_CB = −50 V; I_E = 0
V_CE = −30 V; I_B = 0
V_CE = −30 V; I_B = 0; T_j = 150 °C
V_EB = −5 V; I_C = 0
V_CE = −5 V; I_C = −1 mA
I_C = −5 mA; I_B = −0.25 mA
I_E = i_e = 0; V_CB = −10 V;
f = 1 MHz
MIN.
−
−
−
−
200
−
3.3
−
TYP.
−
−
−
−
−
−
4.7
−
MAX. UNIT
−100 nA
−1
μA
−50 μA
−100 nA
−
−100 mV
6.1 kΩ
3
pF
2003 Oct 15
4