PDTA114E Datasheet, PDF (4/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
PDTA114E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
MAX.
−50
−50
−10
+10
−40
−100
−100
500
250
250
200
150
250
250
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
VALUE
250
500
500
625
833
500
500
2004 Aug 02
4
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W