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PBSS4350Z Datasheet, PDF (4/9 Pages) NXP Semiconductors – 50 V low VCEsat NPN transistor
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NXP Semiconductors
50 V low VCEsat NPN transistor
Product data sheet
PBSS4350Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
RCEsat
VBEsat
VBEon
fT
Cc
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
CONDITIONS
MIN.
VCB = 50 V; IE = 0
−
VCB = 50 V; IE = 0; Tj = 150 °C
−
VEB = 5 V; IC = 0
−
VCE = 2 V; IC = 500 mA
200
VCE = 2 V; IC = 1 A; note 1
200
VCE = 2 V; IC = 2 A; note 1
100
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 50 mA
−
IC = 2 A; IB = 200 mA; note 1
−
IC = 2 A; IB = 200 mA; note 1
−
IC = 2 A; IB = 200 mA; note 1
−
VCE = 2 V; IC = 1 A; note 1
−
IC = 100 mA; VCE = 5 V; f = 100 MHz 100
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
TYP.
−
−
−
−
−
−
−
−
−
110
−
−
−
−
MAX. UNIT
100 nA
50
μA
100 nA
−
−
−
90
170
290
<145
1.2
1.1
−
mV
mV
mV
mΩ
V
V
MHz
30
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 May 13
4
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