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PBSS2515VPN Datasheet, PDF (4/11 Pages) NXP Semiconductors – 15 V low VCE(sat) NPN/PNP transistor
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NXP Semiconductors
15 V low VCE(sat) NPN/PNP transistor
Product data sheet
PBSS2515VPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBE
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
VCB = 15 V; IE = 0 A
VCB = 15 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 100 mA; note 1
VCE = 2 V; IC = 500 mA; note 1
IC = 10 mA; IB = 0.5 mA
IC = 200 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
VCE = 2 V; IC = 100 mA; note 1
−
−
100 nA
−
−
50
μA
−
−
100 nA
200 −
−
150 −
−
90
−
−
−
−
25
mV
−
−
150 mV
−
−
250 mV
−
300 <500 mΩ
−
−
1.1 V
−
−
0.9 V
NPN transistor
fT
transition frequency
Cc
collector capacitance
IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 −
VCB = 10 V; IE = Ie = 0 A; f = 1MHz −
4.4 6
MHz
pF
PNP transistor
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100 280 −
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A; f = 1MHz −
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2005 Jan 11
4
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