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HEF4053B_13 Datasheet, PDF (4/20 Pages) NXP Semiconductors – Triple single-pole double-throw analog switch
NXP Semiconductors
HEF4053B
Triple single-pole double-throw analog switch
7. Functional description
Table 3. Function table [1]
Inputs
E
Sn
L
L
L
H
H
X
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
8. Limiting values
Channel on
nY0 to nZ
nY1 to nZ
switches OFF
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
VEE
IIK
VI
II/O
IDD
Tstg
Tamb
Ptot
supply voltage
supply voltage
input clamping current
input voltage
input/output current
supply current
storage temperature
ambient temperature
total power dissipation
referenced to VDD
pins Sn and E;
VI < 0.5 V or VI > VDD + 0.5 V
Tamb = 40 C to +125 C
DIP16 package
0.5
[1] 18
-
0.5
-
-
65
40
[2]
-
+18
V
+0.5
V
10
mA
VDD + 0.5 V
10
mA
50
mA
+150
C
+125
C
750
mW
SO16 package
-
500
mW
TSSOP16 package
-
500
mW
P
power dissipation
per output
-
100
mW
[1] To avoid drawing VDD current out of terminal Z, when switch current flows into terminals Y, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VDD current will flow out of terminals Y, and in this case there
is no limit for the voltage drop across the switch, but the voltages at Y and Z may not exceed VDD or VEE.
[2] For DIP16 package: Ptot derates linearly with 12 mW/K above 70 C.
For SO16 package: Ptot derates linearly with 8 mW/K above 70 C.
For TSSOP16 package: Ptot derates linearly with 5.5 mW/K above 60 C.
9. Recommended operating conditions
Table 5.
Symbol
VDD
VI
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
see Figure 7
input voltage
ambient temperature
in free air
Min
Typ
Max Unit
3
-
15
V
0
-
40
-
VDD
V
+125 C
HEF4053B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 10 — 17 November 2011
© NXP B.V. 2011. All rights reserved.
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