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| BYC8-600.127 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package | |||
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NXP Semiconductors
BYC8-600
Hyperfast power diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 25 °C
IF = 8 A; Tj = 150 °C; Fig. 4
IF = 16 A; Tj = 150 °C
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 500 V; Tj = 100 °C
Dynamic characteristics
Qr
recovered charge
IF = 1 A; VR = 100 V; dIF/dt = 100 A/µs;
Tj = 25 °C
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; Fig. 5
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
IRM
peak reverse recovery IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs;
current
Tj = 125 °C
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
VFR
forward recovery
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
voltage
Fig. 6
Min Typ Max Unit
-
2
2.9 V
-
1.4 1.85 V
-
1.7 2.3 V
-
9
150 µA
-
1.1 3
mA
-
12
-
nC
-
30
52
ns
-
19
-
ns
-
32
40
ns
-
1.5 5.5 A
-
9.5 12
A
-
8
10
V
BYC8-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 May 2013
© NXP B.V. 2013. All rights reserved
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